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Reliability Prediction (217F)

Failure rate and MTBF of electronic equipment by MIL-HDBK-217F Notice 2: the parts count method with the Appendix A generic failure rates of 174 part types in the fourteen environments, and the part stress method for microcircuits, memories, diodes, transistors, resistors, capacitors, connectors, sockets, circuit boards, connections and crystals with every factor shown, mission reliability, a contribution chart, the sensitivity to temperature and a derating check.

  • Parts count: equipment failure rate = sum of N times generic rate times quality factor, generic rates from the handbook's Appendix A tables as printed, two environments side by side

  • Part stress: junction temperature, temperature, stress, quality and environment factors of each part from the handbook equations, one part printed factor by factor

  • Failure rate in failures per million hours, MTBF, mission reliability, contribution by part family and by part

  • MTBF against ambient temperature and a derating table of each stress ratio and junction temperature against entered limits

Reliability Prediction


Unit System: /

Method, Environments and Mission (temperatures in °C, time in hours)







Part Stress List (one line per part: reference, family, key=value ...)



Derating Limits for the Part Stress List (your policy values)





Parts Count List (one line per part type: reference, part type key, quantity, quality)


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Reliability Prediction

Parts Count and Part Stress Methods, List Syntax, Part Type Keys and Limits of the Handbook

What the handbook predicts

MIL-HDBK-217F, Reliability Prediction of Electronic Equipment, gives a failure rate for each electronic part as a base rate multiplied by factors for temperature, electrical stress, quality and operating environment. The parts of an equipment are taken to be in series and to fail at constant rates, so the equipment failure rate is the sum of the part failure rates, the mean time between failures is its reciprocal and the reliability over a mission of t hours is R = e−λt. All failure rates are in failures per 106 hours. The tool follows the handbook as amended by Notice 1 (10 July 1992) and Notice 2 (28 February 1995), which replaced the resistor, capacitor, connector, circuit board and connection sections and the whole of Appendix A.

The fourteen environments are those of the handbook's Table 3-2: GB ground benign, GF ground fixed, GM ground mobile, NS naval sheltered, NU naval unsheltered, AIC and AIF airborne inhabited (cargo, fighter), AUC and AUF airborne uninhabited (cargo, fighter), ARW rotary winged, SF space flight, MF missile flight, ML missile launch and CL cannon launch. The same list can be evaluated in two environments at once.

Parts count (Appendix A)

For bids and early design, when only the kinds and numbers of parts are known: λEQUIP = Σ Ni (λg πQ)i. The generic failure rate λg of a part type in an environment is read from the Appendix A tables, which the handbook computed from its own part stress models at default conditions stated with each table: a junction temperature of 50 to 90 °C or a component ambient of 30 to 70 °C depending on the environment, a power stress of 0.5 for resistors, a voltage stress of 0.4 for capacitors, 0.7 for diodes and 0.5 for small transistors, hermetic packages with the pin counts shown. πQ is the quality factor of Appendix A, which is not always the part stress value. A microcircuit in production for less than two years also takes the learning factor πL = 0.01 e5.35 − 0.35 Y.

The tool ships the Appendix A rows of 174 part types exactly as printed in Notice 2 (pages A-2, A-3, A-5 to A-10): gate and logic arrays, linear circuits, programmable logic and microprocessors, memories, low-frequency diodes, thyristors, bipolar, field-effect and unijunction transistors, opto-electronic devices, every resistor and capacitor style, transformers and coils, relays, switches and circuit breakers, connectors and sockets, plated-through-hole boards, single connections, quartz crystals and fuses. Not shipped, and entered with the key custom and a rate when needed: hybrids (the handbook gives none), VHSIC and GaAs microcircuits, microwave diodes and transistors, laser diodes, tubes, lasers, rotating devices, elapsed time meters, surface-mount boards, meters, lamps and filters.

A parts count line is reference, part type key, quantity, quality, for example U4-U9, ic_mos_dig_100, 6, B. The quality is a level of the part's family or the factor itself as a number; left blank it is the level whose factor is 1 (MIL-SPEC 1.5 for mechanical relays, lower 1.0 for sockets). A fifth field lg=0.05 replaces the generic rate (it is then used in both environments), and y=1 gives the years in production of a microcircuit. The plated-through-hole board row assumes 1,000 wave-soldered holes on three circuit planes; scale it with lg= or use the part stress method for the board. Text after # is a comment.

Part stress (Sections 5 to 19)

When the design is known, each part is given the temperature and stress it actually sees. A part stress line is reference, family, key=value key=value ...; qty=N repeats identical parts. The families and their keys:

familymodel (handbook section)keys
ic(C1 πT + C2 πE) πQ πL (5.1): gate and logic arrays, linear circuits, PLA / PAL, microprocessorstech bip_dig, mos_dig, bip_lin, mos_lin, bip_pla, mos_pla, bip_up, mos_up; n gates, transistors or bits; pins; pkg herm, glass, flat, can, nonherm; q S, B, B1, COM or a number; y years in production; P watts, theta °C/W (28 when omitted); ea activation energy when the column of Section 5.8 is not the family default
mem(C1 πT + C2 πE + λcyc) πQ πL (5.2)tech mos_rom, mos_prom, mos_dram, mos_sram, bip_rom, bip_sram; n bits (64k, 1M); pins, pkg, q, y, P, theta; lcyc the read / write cycling rate of an EEPROM from the handbook's page 5-5 (0 for every other memory)
diodeλb πT πS πC πQ πE (6.1)type gp, sw, fr, pr, hv, ts, cr, vr; vs reverse voltage over rated voltage (not for ts, cr, vr); bonded yes / no; nj junctions of a high-voltage stack; q JANTXV, JANTX, JAN, LOWER, PLASTIC; P, theta (70 when omitted)
bjtλb πT πA πR πS πQ πE (6.3), below 200 MHzapp lin, sw; pr rated power in watts; vs applied VCE over rated VCEO; q; P, theta
fetλb πT πA πQ πE (6.4), up to 400 MHztype mos, jfet; app lin, sw, pwr; pr rated power (power FETs); q; P, theta
resλb πT πP πS πQ πE (9.1)style RC, RCR, RL, RLR, RN, RNR, RM, RD, RZ, RB, RBR, RW, RWR, RE, RER, RTH, RT, RTR, RR, RA, RK, RP, RJ, RJR, RV, RQ, RVC; p watts dissipated; pr rated watts or s the power stress; q S, R, P, M, MIL, COM
capλb πT πC πV πSR πQ πE (10.1)style CP, CA, CZ, CQ, CH, CHR, CFR, CRH, CM, CMR, CB, CY, CYR, CK, CKR, CC, CDR, CSR, CWR, CL, CLR, CRL, CU, CE, CV, PC, CT, CG; c microfarads; v and vr operating (DC plus peak AC) and rated voltage, or s; cr circuit resistance in ohms per volt (solid tantalum); q D, C, S, R, P, M, L, MIL, COM
connλb πT πK πQ πE (15.1), a mated pairtype circ, edge, hex, rack, rect, rf, tel, pwr, triax; cyc mating cycles per 1,000 hours; amps per contact with gauge (12 to 32), or rise the insert temperature rise; q MIL, LOWER
sockλb πP πQ πE (15.2)type dip, sip, cc, pga, relay, transistor, tube; pins active contacts; q MIL, LOWER
pthλb [N1 πC + N2 (πC + 13)] πQ πE (16.1)n1 wave, infrared or vapour-phase soldered holes; n2 hand soldered holes; planes; tech pwb, dw; q MIL, LOWER
smtECF / αSMT (16.2), the board's weakest surface-mount deviced centre to furthest joint and h joint height in mils (8 for leaded parts); as, acc expansion coefficients of substrate and package in ppm/°C (epoxy-glass 15, plastic 7, ceramic 6 in the handbook's example and table); P, theta; lc leadless, j, s, gull; cr thermal cycles per hour; life design life in years; dtenv temperature swing when the environment default is not wanted
conxλb πE (17.1), one connectiontype hsolder, hsolderw, crimp, weld, wrap, clip, reflow, spring, term
xtalλb πQ πE, λb = 0.013 f0.23 (19.1)f MHz; q MIL, LOWER
customan entered failure ratelam failures per 106 hours, used as typed in every environment

Temperatures. The form gives the air temperature around the parts in each environment. A resistor, capacitor or connector is at that ambient plus its own rise dT, or at an absolute temperature T. A semiconductor's case is at the ambient plus dTc, or at an absolute Tc, and its junction is at TJ = TC + θJC P (Sections 5.11 and 6.14); TJ sets the junction temperature directly. Parts given an absolute temperature do not move when the ambient is changed.

Temperature factors. Microcircuits: πT = 0.1 exp[−(Ea / 8.617 × 10−5) (1/(TJ + 273) − 1/298)] with Ea = 0.4 eV for bipolar digital logic, 0.35 for digital MOS, 0.65 for linear circuits and 0.6 for memories. Diodes: exp[−3091 (1/(TJ + 273) − 1/298)], with 1925 for voltage regulators and current regulators; bipolar transistors 2114; FETs 1925. Resistors, capacitors and connectors use the Arrhenius form without the 0.1, with Ea = 0.2 or 0.08 (resistor columns 1 and 2), 0.15 or 0.35 (capacitor columns 1 and 2) and 0.14 (connectors, at the ambient plus the insert rise k i1.85).

Stress factors. Diodes πS = Vs2.43 (0.054 at 0.3 or less); bipolar transistors πS = 0.045 e3.1 Vs and πR = Pr0.37; resistors πP = P0.39 and πS = 0.71 e1.1 S or 0.54 e2.04 S; capacitors πC = C0.09 or C0.23 and πV = (S / 0.6)m + 1 with m = 5, 10, 3 or 17, or (S / 0.5)3 + 1 for variable capacitors. The handbook's models stop at a stress ratio of 1; a line above it is refused.

One part of the list, chosen by its line number, is printed factor by factor; the table lists the factors of every part.

Contribution, temperature and derating

The failure rate is grouped by part family and the largest lines are charted, which is the use the handbook itself recommends: to show where the failure rate comes from and what a change of part quality, stress or cooling buys. For the part stress method the list is evaluated again from 0 to 100 °C ambient and the MTBF plotted against temperature. The derating table compares each resistor power ratio, capacitor voltage ratio, semiconductor voltage stress and junction temperature with limits typed on the form. The handbook sets no derating limits; the defaults on the form (0.5, 0.6, 0.7 and 110 °C) are illustrative and should be replaced by those of the programme's derating guideline. The default parts lists describe an illustrative digital control board of 42 parts, not a published example.

Checks against the handbook

The tool reproduces the handbook's worked examples that use these models: the CMOS gate array of Section 5.13 (0.15 failures per 106 hours), the die, transistor and diode of the hybrid example (0.038, 0.031, 0.0015, 0.0069), the dual transistor of Section 6.15 (0.011), the capacitor of Section 10.2 and the surface-mount example of Section 16.2 (18,893 cycles, 0.4). Every Appendix A cell of a part type that has a part stress model here (1,964 cells) was recomputed from that model at the appendix's stated defaults; 1,930 agree to the two printed figures and the rest differ by the handbook's own rounding (the film-resistor rows are printed to one figure).

Points where the printed handbook is not consistent with itself, and what the tool does: the capacitor example prints 0.049 from factors rounded to two figures, and the unrounded model gives 0.047; the Appendix A note gives 20 µF as the assumed capacitance of glass and ceramic capacitors, but the printed rows are reproduced with 2.0 µF; the default table for diodes on page A-12 lists a base rate of 0.0031 for transient suppressors where Section 6.1 and the printed row use 0.0013; the MOS programmable-logic table of Section 5.1 jumps from "501 to 1,000" to "2,001 to 5,000" gates where Appendix A prints 501 to 2,000 (the tool uses 2,000); component F of the hybrid example still uses the capacitor model that Notice 2 replaced; the learning-factor equation gives 1.05 at two years where the table gives 1.0 (the tool uses 1.0 from two years).

Limits of the prediction

The models are point estimates fitted to field data gathered before 1995 and the handbook has not been revised since; later part types and packages are extrapolations. Failures are assumed random at a constant rate: wear-out, infant mortality, software, design errors and induced failures are outside the models (the surface-mount model is the one wear-out model, averaged over the design life). The parts are taken in series with no redundancy. The handbook states that a prediction "should never be assumed to represent the expected field reliability" and is a means of comparing designs and locating the main contributors. The equipment failure rate found here is the input of a block in System Reliability and of a basic event in Fault Tree Analysis, where redundancy and repair are treated.

Part type keys of the parts count method

Generic failure rates in ground benign and airborne inhabited cargo are shown for orientation; the tool holds all fourteen environments.

keypart typedefault of the tableλg GBλg AICpage
ic_bip_dig_100Bipolar gate/logic array, digital, 1 to 100 gates16 pin DIP0.00360.025A-2
ic_bip_dig_1kBipolar gate/logic array, digital, 101 to 1,000 gates24 pin DIP0.0060.039A-2
ic_bip_dig_3kBipolar gate/logic array, digital, 1,001 to 3,000 gates40 pin DIP0.0110.07A-2
ic_bip_dig_10kBipolar gate/logic array, digital, 3,001 to 10,000 gates128 pin PGA0.0330.23A-2
ic_bip_dig_30kBipolar gate/logic array, digital, 10,001 to 30,000 gates180 pin PGA0.0520.34A-2
ic_bip_dig_60kBipolar gate/logic array, digital, 30,001 to 60,000 gates224 pin PGA0.0750.46A-2
ic_bip_lin_100Bipolar linear, 1 to 100 transistors14 pin DIP0.00950.057A-2
ic_bip_lin_300Bipolar linear, 101 to 300 transistors18 pin DIP0.0170.1A-2
ic_bip_lin_1kBipolar linear, 301 to 1,000 transistors24 pin DIP0.0330.19A-2
ic_bip_lin_10kBipolar linear, 1,001 to 10,000 transistors40 pin DIP0.050.29A-2
ic_bip_pla_200Bipolar programmable logic array, up to 200 gates16 pin DIP0.00610.032A-2
ic_bip_pla_1kBipolar programmable logic array, 201 to 1,000 gates24 pin DIP0.0110.054A-2
ic_bip_pla_5kBipolar programmable logic array, 1,001 to 5,000 gates40 pin DIP0.0220.099A-2
ic_mos_dig_100MOS gate/logic array, digital, 1 to 100 gates16 pin DIP0.00570.029A-2
ic_mos_dig_1kMOS gate/logic array, digital, 101 to 1,000 gates24 pin DIP0.010.049A-2
ic_mos_dig_3kMOS gate/logic array, digital, 1,001 to 3,000 gates40 pin DIP0.0190.088A-2
ic_mos_dig_10kMOS gate/logic array, digital, 3,001 to 10,000 gates128 pin PGA0.0490.27A-2
ic_mos_dig_30kMOS gate/logic array, digital, 10,001 to 30,000 gates180 pin PGA0.0840.42A-2
ic_mos_dig_60kMOS gate/logic array, digital, 30,001 to 60,000 gates224 pin PGA0.130.59A-2
ic_mos_lin_100MOS linear, 1 to 100 transistors14 pin DIP0.00950.057A-2
ic_mos_lin_300MOS linear, 101 to 300 transistors18 pin DIP0.0170.1A-2
ic_mos_lin_1kMOS linear, 301 to 1,000 transistors24 pin DIP0.0330.19A-2
ic_mos_lin_10kMOS linear, 1,001 to 10,000 transistors40 pin DIP0.050.29A-2
ic_mos_fpla_500MOS floating-gate programmable logic array, up to 500 gates24 pin DIP0.00460.035A-2
ic_mos_fpla_2kMOS floating-gate programmable logic array, 501 to 2,000 gates28 pin DIP0.00560.042A-2
ic_mos_fpla_5kMOS floating-gate programmable logic array, 2,001 to 5,000 gates28 pin DIP0.00610.043A-2
ic_mos_fpla_20kMOS floating-gate programmable logic array, 5,001 to 20,000 gates40 pin DIP0.00950.065A-2
ic_bip_up_8Bipolar microprocessor, up to 8 bits40 pin DIP0.0280.12A-2
ic_bip_up_16Bipolar microprocessor, up to 16 bits64 pin PGA0.0520.21A-2
ic_bip_up_32Bipolar microprocessor, up to 32 bits128 pin PGA0.110.44A-2
ic_mos_up_8MOS microprocessor, up to 8 bits40 pin DIP0.0480.16A-2
ic_mos_up_16MOS microprocessor, up to 16 bits64 pin PGA0.0930.3A-2
ic_mos_up_32MOS microprocessor, up to 32 bits128 pin PGA0.190.61A-2
mem_mos_rom_16kMOS ROM, up to 16K24 pin DIP0.00470.037A-3
mem_mos_rom_64kMOS ROM, 16K to 64K28 pin DIP0.00590.045A-3
mem_mos_rom_256kMOS ROM, 64K to 256K28 pin DIP0.00670.048A-3
mem_mos_rom_1mMOS ROM, 256K to 1M40 pin DIP0.0110.075A-3
mem_mos_prom_16kMOS PROM / UVEPROM / EEPROM / EAPROM, up to 16K24 pin DIP0.00490.037A-3
mem_mos_prom_64kMOS PROM / UVEPROM / EEPROM / EAPROM, 16K to 64K28 pin DIP0.00610.046A-3
mem_mos_prom_256kMOS PROM / UVEPROM / EEPROM / EAPROM, 64K to 256K28 pin DIP0.00720.051A-3
mem_mos_prom_1mMOS PROM / UVEPROM / EEPROM / EAPROM, 256K to 1M40 pin DIP0.0120.08A-3
mem_mos_dram_16kMOS DRAM, up to 16K18 pin DIP0.0040.029A-3
mem_mos_dram_64kMOS DRAM, 16K to 64K22 pin DIP0.00550.039A-3
mem_mos_dram_256kMOS DRAM, 64K to 256K24 pin DIP0.00740.049A-3
mem_mos_dram_1mMOS DRAM, 256K to 1M28 pin DIP0.0110.07A-3
mem_mos_sram_16kMOS / BiMOS SRAM, up to 16K18 pin DIP0.00790.048A-3
mem_mos_sram_64kMOS / BiMOS SRAM, 16K to 64K22 pin DIP0.0140.077A-3
mem_mos_sram_256kMOS / BiMOS SRAM, 64K to 256K24 pin DIP0.0230.12A-3
mem_mos_sram_1mMOS / BiMOS SRAM, 256K to 1M28 pin DIP0.0430.22A-3
mem_bip_rom_16kBipolar ROM / PROM, up to 16K24 pin DIP0.010.062A-3
mem_bip_rom_64kBipolar ROM / PROM, 16K to 64K28 pin DIP0.0170.095A-3
mem_bip_rom_256kBipolar ROM / PROM, 64K to 256K28 pin DIP0.0280.15A-3
mem_bip_rom_1mBipolar ROM / PROM, 256K to 1M40 pin DIP0.0530.27A-3
mem_bip_sram_16kBipolar SRAM, up to 16K24 pin DIP0.00750.05A-3
mem_bip_sram_64kBipolar SRAM, 16K to 64K28 pin DIP0.0120.072A-3
mem_bip_sram_256kBipolar SRAM, 64K to 256K28 pin DIP0.0180.1A-3
mem_bip_sram_1mBipolar SRAM, 256K to 1M40 pin DIP0.0330.18A-3
d_gpDiode, general purpose analogSection 6.10.00360.092A-5
d_swDiode, switchingSection 6.10.000940.024A-5
d_frDiode, fast recovery power rectifierSection 6.10.0230.61A-5
d_prDiode, power rectifier / Schottky powerSection 6.10.00280.073A-5
d_tsDiode, transient suppressor / varistorSection 6.10.00290.075A-5
d_vrDiode, voltage reference / regulator (avalanche and Zener)Section 6.10.00330.066A-5
d_crDiode, current regulatorSection 6.10.00560.11A-5
d_scrThyristor / SCRSection 6.100.00250.064A-5
q_npnTransistor, NPN / PNP (f < 200 MHz)Section 6.30.000150.003A-5
q_pwrTransistor, power NPN / PNP (f < 200 MHz)Section 6.30.00570.12A-5
q_fetTransistor, Si FET (f <= 400 MHz)Section 6.40.0140.28A-5
q_ujtTransistor, unijunctionSection 6.50.0160.36A-5
o_pdOpto-electronic photodetectorSection 6.110.0110.084A-6
o_isoOpto-isolatorSection 6.110.0270.2A-6
o_ledOpto-electronic emitter (LED)Section 6.110.000470.0035A-6
o_dispAlphanumeric displaySection 6.120.00620.046A-6
r_rcrResistor, composition, RCR (MIL-R-39008)Section 9.10.00220.071A-7
r_rcResistor, composition, RC (MIL-R-11)Section 9.10.00220.071A-7
r_rlrResistor, film, insulated, RLR (MIL-R-39017)Section 9.10.00370.08A-7
r_rlResistor, film, insulated, RL (MIL-R-22684)Section 9.10.00370.08A-7
r_rnrResistor, film, RN (R, C or N) (MIL-R-55182)Section 9.10.00370.08A-7
r_rmResistor, film, chip, RM (MIL-R-55342)Section 9.10.00370.08A-7
r_rnResistor, film, RN (MIL-R-10509)Section 9.10.00370.08A-7
r_rdResistor, film, power, RD (MIL-R-11804)Section 9.10.010.18A-7
r_rzResistor network, film, RZ (MIL-R-83401)Section 9.10.00160.053A-7
r_rbrResistor, wirewound, accurate, RBR (MIL-R-39005)Section 9.10.00240.054A-7
r_rbResistor, wirewound, accurate, RB (MIL-R-93)Section 9.10.00240.054A-7
r_rwrResistor, wirewound, power, RWR (MIL-R-39007)Section 9.10.00850.19A-7
r_rwResistor, wirewound, power, RW (MIL-R-26)Section 9.10.00850.19A-7
r_rerResistor, wirewound, power, chassis mounted, RER (MIL-R-39009)Section 9.10.0160.36A-7
r_reResistor, wirewound, power, chassis mounted, RE (MIL-R-18546)Section 9.10.0160.36A-7
r_rthThermistor, RTH (MIL-T-23648)Section 9.10.00140.026A-7
r_rtrResistor, variable, wirewound, RTR (MIL-R-39015)Section 9.10.00240.054A-7
r_rtResistor, variable, wirewound, RT (MIL-R-27208)Section 9.10.00240.054A-7
r_rrResistor, variable, wirewound, precision, RR (MIL-R-12934)Section 9.10.00240.054A-7
r_raResistor, variable, wirewound, semiprecision, RA (MIL-R-19)Section 9.10.00260.083A-7
r_rkResistor, variable, wirewound, semiprecision, RK (MIL-R-39002)Section 9.10.00260.083A-7
r_rpResistor, variable, wirewound, power, RP (MIL-R-22)Section 9.10.00240.054A-7
r_rjrResistor, variable, nonwirewound, RJR (MIL-R-39035)Section 9.10.00370.083A-7
r_rjResistor, variable, nonwirewound, RJ (MIL-R-22097)Section 9.10.00370.083A-7
r_rvResistor, variable, composition, RV (MIL-R-94)Section 9.10.00370.083A-7
r_rqResistor, variable, nonwirewound, precision, RQ (MIL-R-39023)Section 9.10.0040.13A-7
r_rvcResistor, variable, film, RVC (MIL-R-23285)Section 9.10.0040.13A-7
c_cpCapacitor, paper, by-pass, CP (MIL-C-25)Section 10.10.000510.0095A-8
c_caCapacitor, paper, by-pass, CA (MIL-C-12889)Section 10.10.000510.0095A-8
c_czCapacitor, paper / plastic, feed-through, CZ, CZR (MIL-C-11693)Section 10.10.000510.0095A-8
c_cqCapacitor, paper / plastic film, CQ, CQR (MIL-C-19978)Section 10.10.00070.013A-8
c_chCapacitor, metallized plastic / plastic, CH (MIL-C-18312)Section 10.10.000510.0095A-8
c_chrCapacitor, metallized paper / plastic, CHR (MIL-C-39022)Section 10.10.00070.013A-8
c_cfrCapacitor, metallized paper / plastic, CFR (MIL-C-55514)Section 10.10.00070.013A-8
c_crhCapacitor, metallized plastic, CRH (MIL-C-83421)Section 10.10.00070.013A-8
c_cmCapacitor, mica (dipped), CM (MIL-C-5)Section 10.10.000570.019A-8
c_cmrCapacitor, mica (dipped or molded), CMR (MIL-C-39001)Section 10.10.000570.019A-8
c_cbCapacitor, mica (button), CB (MIL-C-10950)Section 10.10.000570.019A-8
c_cyrCapacitor, glass, CYR (MIL-C-23269)Section 10.10.0010.034A-8
c_cyCapacitor, glass, CY (MIL-C-11272)Section 10.10.0010.034A-8
c_ckCapacitor, ceramic, general purpose, CK (MIL-C-11015)Section 10.10.00170.057A-8
c_ckrCapacitor, ceramic, general purpose, CKR (MIL-C-39014)Section 10.10.00170.057A-8
c_ccCapacitor, ceramic, temperature compensating, CC, CCR (MIL-C-20)Section 10.10.00170.057A-8
c_cdrCapacitor, ceramic chip, CDR (MIL-C-55681)Section 10.10.00350.12A-8
c_csrCapacitor, tantalum, solid, CSR (MIL-C-39003)Section 10.10.00140.026A-8
c_cwrCapacitor, tantalum, chip, CWR (MIL-C-55365)Section 10.10.000140.0025A-8
c_clrCapacitor, tantalum, non-solid, CLR (MIL-C-39006)Section 10.10.00220.04A-8
c_clCapacitor, tantalum, non-solid, CL (MIL-C-3965)Section 10.10.00220.04A-8
c_crlCapacitor, tantalum, non-solid, CRL (MIL-C-83500)Section 10.10.00220.04A-8
c_cuCapacitor, aluminum oxide, CU, CUR (MIL-C-39018)Section 10.10.00130.042A-8
c_ceCapacitor, aluminum, dry, CE (MIL-C-62)Section 10.10.00130.042A-8
c_cvCapacitor, variable, ceramic, CV (MIL-C-81)Section 10.10.00550.1A-8
c_pcCapacitor, variable, piston, PC (MIL-C-14409)Section 10.10.00470.16A-8
c_ctCapacitor, variable, air trimmer, CT (MIL-C-92)Section 10.15.7×10−60.00019A-8
c_cgCapacitor, variable, vacuum, CG (MIL-C-23183)Section 10.10.00420.077A-8
l_xswTransformer, switching (MIL-T-21038)Section 11.10.000610.0051A-9
l_xfbTransformer, flyback (MIL-T-27)Section 11.10.00580.048A-9
l_xauTransformer, audio (MIL-T-27)Section 11.10.0150.12A-9
l_xpwTransformer, power (MIL-T-27)Section 11.10.0530.44A-9
l_xrfTransformer, RF (MIL-T-55631)Section 11.10.141.2A-9
l_coilCoil, fixed inductor or choke (MIL-C-15305, MIL-C-39010)Section 11.23.2×10−50.00027A-9
l_coilvCoil, variable inductor (MIL-C-15305)Section 11.25×10−50.00044A-9
k_gpRelay, general purpose (balanced armature)Section 13.10.0490.6A-9
k_sensRelay, sensitive (balanced armature)Section 13.10.0991.2A-9
k_reedRelay, dry reedSection 13.10.0590.72A-9
k_thermRelay, thermal bi-metalSection 13.10.0991.2A-9
k_latchRelay, magnetic latching (balanced armature)Section 13.10.0490.6A-9
k_contContactor, high current (solenoid)Section 13.10.0490.6A-9
k_ssrRelay, solid state, allSection 13.20.0290.35A-9
s_dipSwitch, dual in-line packageSection 14.10.000120.0012A-9
s_limitSwitch, limitSection 14.14.343A-9
s_mwSwitch, microwaveSection 14.11.717A-9
s_pbSwitch, pushbuttonSection 14.10.11A-9
s_reedSwitch, reedSection 14.10.0010.01A-9
s_rockSwitch, rockerSection 14.10.0230.23A-9
s_rotSwitch, rotarySection 14.10.111.1A-9
s_sensSwitch, sensitiveSection 14.10.494.9A-9
s_thermSwitch, thermalSection 14.10.0310.31A-9
s_thumbSwitch, thumbwheelSection 14.10.181.8A-9
s_togSwitch, toggleSection 14.10.11A-9
s_cbCircuit breaker, allSection 14.20.684.8A-9
j_circConnector, circularSection 15.10.00110.0049A-9
j_edgeConnector, PCB card edgeSection 15.10.0440.2A-9
j_hexConnector, hexagonalSection 15.10.160.74A-9
j_rackConnector, rack and panelSection 15.10.0230.1A-9
j_rectConnector, rectangularSection 15.10.050.23A-9
j_rfConnector, RF coaxialSection 15.10.000450.002A-9
j_telConnector, telephoneSection 15.10.00820.037A-9
j_sockIC socket (DIP, SIP, PGA)Section 15.20.00350.028A-9
b_pthPlated-through-hole circuit board (1,000 wave-soldered joints, 3 planes)Section 16.10.0220.11A-10
x_hsolderConnection, hand solder without wrappingSection 17.10.00130.0052A-10
x_hsolderwConnection, hand solder with wrappingSection 17.17×10−50.00028A-10
x_crimpConnection, crimpSection 17.10.000260.001A-10
x_weldConnection, weldSection 17.11.5×10−56×10−5A-10
x_wrapConnection, solderless wrapSection 17.16.8×10−62.7×10−5A-10
x_clipConnection, clip terminationSection 17.10.000120.00048A-10
x_reflowConnection, reflow solderSection 17.16.9×10−50.00028A-10
x_springConnection, spring contactSection 17.10.170.68A-10
x_termConnection, terminal blockSection 17.10.0620.25A-10
y_xtalQuartz crystal (MIL-C-3098)Section 19.10.0320.38A-10
f_fuseFuseSection 22.10.010.09A-10



References

U.S. Department of Defense (1991). Reliability Prediction of Electronic Equipment. MIL-HDBK-217F, 2 December 1991.

U.S. Department of Defense (1992). Reliability Prediction of Electronic Equipment. MIL-HDBK-217F, Notice 1, 10 July 1992.

U.S. Department of Defense (1995). Reliability Prediction of Electronic Equipment. MIL-HDBK-217F, Notice 2, 28 February 1995.

Worked Examples

Published examples this tool reproduces; each page lists the inputs to enter and the printed answers.

All worked examples


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